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Moore's Law: Next-generation nanoscale inteconnects in semiconductor chips

Posted on 25/01/2012

Fundamental studies of the flow of a film of liquid helium-three over a surface at low temperatures provide a model system to help understand the origin of the electrical resistance of the nano-scale connections on computer chips. Rigorous comparison of experiment with theory suggests strategies for lowering the interconnect resistance. The resulting decrease in heating should allow a higher density of devices. This improved understanding contributes to the drive to make computers even faster and more effective.

The full paper can be found here: prl.aps.org/pdf/PRL/v107/i19/e196805, the abstract is showed below:

"We discuss the mass transport of a degenerate Fermi liquid Helium 3 film over a rough surface, and the film momentum relaxation time, in the framework of theoretical predictions. In the mesoscopic regime, the anomalous temperature dependence of the relaxation time is explained in terms of the interference between elastic boundary scattering and inelastic quasiparticle-quasiparticle scattering within the film. We exploit a quasiclassical treatment of quantum size effects in the film in which the surface roughness, whose power spectrum is experimentally determined, is mapped into an effective disorder potential within a film of uniform thickness. Confirmation is provided by the introduction of elastic scattering centers within the film. The improved understanding of surface roughness scattering may impact on enhancing the conductivity in thin metallic films."

P. Sharma, A. Co´rcoles, R. G. Bennett, J. M. Parpia, B. Cowan, A. Casey and J. Saunders.


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